Reactions of Hydrogen with Si-SiO 2 Interfaces

[1]  Marvin L. Cohen,et al.  Special Points in the Brillouin Zone , 1973 .

[2]  Max J. Schulz,et al.  Insulating Films on Semiconductors , 1981 .

[3]  Patrick M. Lenahan,et al.  Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .

[4]  Louie,et al.  First-principles theory of quasiparticles: Calculation of band gaps in semiconductors and insulators. , 1985, Physical review letters.

[5]  T. R. Oldham,et al.  Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing , 1986, IEEE Transactions on Nuclear Science.

[6]  T. Sugano,et al.  Electron spin resonance observation of the creation, annihilation, and charge state of the 74‐Gauss doublet in device oxides damaged by soft x rays , 1987 .

[7]  W. L. Warren,et al.  A Comparison of Positive Charge Generation in High Field Stressing and Ionizing Radiation on MOS Structures , 1987, IEEE Transactions on Nuclear Science.

[8]  T. Sugano,et al.  Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen , 1988 .

[9]  Brower Kl,et al.  Kinetics of H2 passivation of Pb centers at the (111) Si-SiO2 interface. , 1988 .

[10]  Pantelides,et al.  Theory of hydrogen diffusion and reactions in crystalline silicon. , 1989, Physical review letters.

[11]  Patrick M. Lenahan,et al.  Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates , 1988 .

[12]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[13]  Chu Ax,et al.  Theory of oxide defects near the Si-SiO2 interface. , 1990 .

[14]  Dennis B. Brown,et al.  Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field , 1991 .

[15]  A. Reisman,et al.  Correlation of Fixed Positive Charge and E′γ Centers as Measured via Electron Injection and Electron Paramagnetic Resonance Techniques , 1991 .

[16]  T. Arias,et al.  Iterative minimization techniques for ab initio total energy calculations: molecular dynamics and co , 1992 .

[17]  J. F. Conley,et al.  Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trap , 1992 .

[18]  P. Lenahan,et al.  Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide , 1992 .

[19]  D. Fleetwood,et al.  Microscopic nature of border traps in MOS oxides , 1994 .

[20]  Arthur H. Edwards,et al.  Interaction of hydrogen with defects in a-SiO2 , 1994 .

[21]  E. Cartier,et al.  Hot‐electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface , 1996 .

[22]  Daniel M. Fleetwood,et al.  1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices , 1997 .

[23]  Shashi P. Karna,et al.  Irradiation response of mobile protons in buried SiO/sub 2/ films , 1997 .

[24]  D. Fleetwood,et al.  Non-volatile memory device based on mobile protons in SiO2 thin films , 1997, Nature.

[25]  Kenneth F. Galloway,et al.  Space charge limited degradation of bipolar oxides at low electric fields , 1998 .

[26]  H. L. Hughes,et al.  H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation models , 1998 .

[27]  J. Stathis,et al.  HYDROGEN ELECTROCHEMISTRY AND STRESS-INDUCED LEAKAGE CURRENT IN SILICA , 1999 .

[28]  peixiong zhao,et al.  Ab initio calculations of H/sup +/ energetics in SiO/sub 2/: Implications for transport , 1999 .

[29]  Henry A. Kurtz,et al.  Proton Mobility in a-SiO, , 1999 .

[30]  S. Pantelides,et al.  Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon , 1999 .

[31]  peixiong zhao,et al.  Hydrogen-Related Defects in Irradiated SiO , 2000 .

[32]  Pantelides,et al.  Bonding arrangements at the Si-SiO2 and SiC-SiO2 interfaces and a possible origin of their contrasting properties , 2000, Physical review letters.

[33]  M. Di Ventra,et al.  Hydrogen passivation and activation of oxygen complexes in silicon , 2001 .