A chip design concept for an extremely low on-state voltage 1200V FS-IGBT/FWD with high withstand capability for the MERS configuration

This paper descr ibes IGBT and FWD design concept and measured results for the application of Magnetic Energy Recovery Switch (MERS) configuration for the first time. Since the switching frequency in the MERS application is so slow of 50–60Hz that a lower on-state voltage drop is strongly r equired for the IGBT and FWD chips even though their fast switching features are sacr ificed. Therefor e, the newly developed IGBT and FWD chip for this configuration exhibits an extr eme low on-state voltage drop while maintaining its turn-off withstand capability.