Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon

Sub-wavelength quantum dot microdisk lasers were directly grown on (001) silicon by MOVPE. Lasing in C-band up to 60 °C was achieved with a low RT threshold of 3.7 gW and a high T0 of 130 K.

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