论文信息 - Design and fabrication of physical vapor transport system for the growth of SiC crystals

Design and fabrication of physical vapor transport system for the growth of SiC crystals

A physical vapor transport (PVT) system has been designed and fabricated for growing SiC single crystals. Novel multisegmented graphite insulation has been used for improved heat containment in the hotzone. Numerical modeling was applied to obtain the temperature field inside the hotzone, which also helped in predicting various growth parameters. Single crystals of 6H SiC were grown by the modified Lely method using the PVT system developed in the laboratory. The grown crystals were subjected to preliminary characterization.

M. Dudley | V. Prasad | Hui Zhang | R. Ma | G. Dhanaraj

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