Heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator

We have developed a Mach-Zehnder modulator using a 700-pm-long heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor. It exhibits VπL and insertion loss of 0.41 Vcm and 1.0 dB, respectively. We also demonstrate 25-Gbit/s NRZ signal modulation.