p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
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P-channel AlGaAs/GaAs heterostructure FETs (p-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mSmm-1 and 46 mSmm-1 with a gate length of 1 µm. Calculations indicate that transconductances of more than 100 mSmm-1 at 300 K and more than 200 mSmm-1 at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing p-HFETs for complementary logic, workable even at room temperature.
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