Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy

We studied the electrical behavior of multiple InGaN/GaN quantum well based light emitting diodes grown by molecular beam epitaxy and we determined three different domains of current-voltage dependence. We then described the charge carrier transport mechanisms for these three domains. The first domain, corresponding to leakage currents (V 3.5 V), the current is limited by the p-GaN zone. In this zone, the...

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