The Quantum Hydrodynamic Model for Semiconductor Devices
暂无分享,去创建一个
[1] F. Odeh,et al. The Wigner function for thermal equilibrium , 1991 .
[2] Ferry,et al. Self-consistent study of the resonant-tunneling diode. , 1989, Physical review. B, Condensed matter.
[3] G. Iafrate,et al. Quantum correction to the equation of state of an electron gas in a semiconductor. , 1989, Physical review. B, Condensed matter.
[4] Carl L. Gardner,et al. Numerical simulation of a steady-state electron shock wave in a submicrometer semiconductor device , 1991 .
[5] A. Yoshii,et al. Hot-electron velocity characteristics at AlGaAs/GaAs heterostructures , 1984, IEEE Electron Device Letters.
[6] D. Bohm,et al. The Aharonov-Bohm effect and the quantum potential , 1982 .
[7] D. Rose,et al. Global approximate Newton methods , 1981 .
[8] J. Mayer,et al. On the Quantum Correction for Thermodynamic Equilibrium , 1947 .
[9] C. Gardner. Hydrodynamic and Monte Carlo simulation of an electron shock wave in a 1- mu m n/sup +/-n-n/sup +/ diode , 1993 .
[10] M. Stroscio. Moment-equation representation of the dissipative quantum Liouville equation , 1986 .
[11] H. Juretschke,et al. Introduction to Solid-State Theory , 1978 .
[12] R. Kolbas,et al. Resonant tunneling transport at 300 K in GaAs‐AlGaAs quantum wells grown by metalorganic chemical vapor deposition , 1986 .
[13] A. Kriman,et al. Transient Simulation of Ultra-Small GaAs MESFET Using Quantum Moment Equations , 1992, Picosecond Electronics and Optoelectronics.
[14] R. Trew,et al. A New Nonparabolic Hydrodynamic Model with Quantum Corrections , 1991 .
[15] M. Ancona,et al. Macroscopic physics of the silicon inversion layer. , 1987, Physical review. B, Condensed matter.
[16] Resonant Tunneling in the Quantum Hydrodynamic Model , 1995 .
[17] David K. Ferry,et al. UTILIZATION OF QUANTUM DISTRIBUTION FUNCTIONS FOR ULTRA-SUBMICRON DEVICE TRANSPORT , 1981 .
[18] Naoki Yokoyama,et al. Self‐consistent analysis of resonant tunneling current , 1986 .
[19] Bernardo Cockburn,et al. Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode at 300 K , 1995, Journal of Computational Electronics.
[20] J. Barker,et al. The quantum mechanical tunnelling time problem-revisited , 1987 .
[21] G. Baccarani,et al. An investigation of steady-state velocity overshoot in silicon , 1985 .
[22] E. Wigner. On the quantum correction for thermodynamic equilibrium , 1932 .
[23] Turley,et al. Electronic wave functions and electron-confined-phonon matrix elements in GaAs/AlxGa1-xAs double-barrier resonant-tunneling structures. , 1991, Physical review. B, Condensed matter.
[24] A. Jauho,et al. Time-dependent tunneling of wave-packets through heterostructures in an applied field , 1986 .
[25] W. Frensley. Simulation of resonant‐tunneling heterostructure devices , 1985 .
[26] Massimo Rudan,et al. MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES , 1986 .
[27] H. L. Grubin,et al. Quantum moment balance equations and resonant tunnelling structures , 1989 .
[28] ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES , 1990 .
[29] M. Fischetti. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport , 1991 .
[30] Donald J. Rose,et al. Numerical methods for the hydrodynamic device model: subsonic flow , 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[31] R. Trew,et al. Construction of higher‐moment terms in the hydrodynamic electron‐transport model , 1993 .
[32] G. Whitham,et al. Linear and Nonlinear Waves , 1976 .