论文信息 - Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications - 字舞流文

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

R. Lai | M. Barsky | X. Mei | A. Oki | M. Wojtowicz | D. Buttari | M. Biedenbender | R. Tsai | Y. Chou | T. Block | D. Leung | D. Eng | C. H. Lin | L. S. Lee | L. Lee