Next generation field-effect transistors based on 2D black phosphorus crystal

Two-dimensional (2D) crystals emerge as a new class of semiconducting material which may potentially revolutionize future electronic devices. Unlike graphene, black phosphorus (BP) is a semiconductor which has a predicted direct bandgap that can be tuned from 0.3 eV in its bulk form to 2.0 eV when reduces to a monolayer thinness. The presence of a bandgap in BP makes it advantageous over graphene in facilitating good transistor switching action. Here, field-effect transistors based on multi-layer BP and high-k gate dielectric (HfO2) are demonstrated using CMOS-compatible processes. Respectable transistor characteristics are achieved including a room temperature hole mobility of ~413 cm2/Vs and a subthreshold slope of ~200 mV/dec. Good ohmic contacts with a low Schottky barrier height of ~130 meV is realized using nickel (Ni), which can be further reduced to ~20 meV through thermal annealing. The potential of achieving low contact resistance coupled with enhanced carrier transport properties makes BP a promising channel material for next generation nanoelectronic device applications.

[1]  W. Marsden.  I and J , 2012 .

[2]  Vibhor Singh,et al.  Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping , 2013, 1311.4829.

[3]  A. Javey,et al.  High-performance single layered WSe₂ p-FETs with chemically doped contacts. , 2012, Nano letters.

[4]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[5]  Gyu-Tae Kim,et al.  Few-layer black phosphorus field-effect transistors with reduced current fluctuation. , 2014, ACS nano.

[6]  A. H. Castro Neto,et al.  Electric field effect in ultrathin black phosphorus , 2014 .

[7]  P ? ? ? ? ? ? ? % ? ? ? ? , 1991 .

[8]  Peide D. Ye,et al.  High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[9]  M. Kamalakar,et al.  Nanolayer Black-Phosphorous Field Effect Devices with Ferromagnetic Tunnel Contacts , 2014 .

[10]  A. Sumant,et al.  All two-dimensional, flexible, transparent, and thinnest thin film transistor. , 2014, Nano letters.

[11]  F. Xia,et al.  Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. , 2014, Nature communications.

[12]  Chongwu Zhou,et al.  Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts. , 2017, ACS nano.

[13]  M. Kamalakar,et al.  Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts. , 2015, Small.

[14]  J. Appenzeller,et al.  High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.

[15]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[16]  David Jones.  High performance , 1989, Nature.

[17]  Yan Xin,et al.  Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities. , 2014, ACS nano.

[19]  Deji Akinwande,et al.  High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. , 2013, ACS nano.

[20]  Aaas News,et al.  Book Reviews , 1893, Buffalo Medical and Surgical Journal.

[21]  K. Ng,et al.  The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.

[22]  D. Akinwande,et al.  Flexible black phosphorus ambipolar transistors, circuits and AM demodulator. , 2015, Nano letters.

[23]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[24]  K. Banerjee,et al.  High-Performance Field-Effect-Transistors On Monolayer-WSe2 , 2013 .

[25]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[26]  Zhixian Zhou,et al.  Polarized photocurrent response in black phosphorus field-effect transistors. , 2014, Nanoscale.

[27]  Rui Yang,et al.  Electrical breakdown of multilayer MoS2 field-effect transistors with thickness-dependent mobility. , 2014, Nanoscale.

[28]  Wei Liu,et al.  Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. , 2013, Nano letters.