Growth by LPE of Nd: YAG single crystal layers for waveguide laser applications

Nd:YAG layers, for waveguide laser applications, have been grown by liquid phase epitaxy on [111] YAG substrates from a saturated PbO/B 2 0 3 flux using the horizontal dipping technique. The influence of melt composition on growth conditions is discussed. Some substitutions (gallium, lutetium) were studied with the purpose of optimizing the waveguide properties.