THZ DETECTION BY FIELD-EFFECT TRANSISTORS IN MAGNETIC FIELDS: SHALLOW WATER VS DEEP WATER MECHANISM OF ELECTRON PLASMA INSTABILITY

Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigated at 4 K as a function of the magnetic field B. The detection signal (a source - drain photovoltage appearing as a response to THz radiation) was found to be periodic in B-1, i.e., it showed Shubnikov - de Haas oscillations. A Fourier transform of the signal showed a large amplitude component independent of the gate voltage, and a small amplitude component dependent on it. This shows that a HEMT response to the radiation cannot be described either by a plasma instability in gated ("shallow water") or in ungated ("deep water") parts of the channel, but rather by a response of the channel as a whole. This is in a good correspondence with recent experimental evidence of antenna effects in detection of radiation by HEMTs and advanced theoretical models of instability of coupled gated - ungated plasma in HEMTs.

[1]  M. Shur,et al.  Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power , 2006 .

[2]  W. Knap,et al.  Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors , 2006 .

[3]  G. M. Tsymbalov,et al.  Tunable anticrossing of gated and ungated plasma resonances and enhancement of interlayer terahertz electric field in an asymmetric bilayer of density-modulated two-dimensional electron gases , 2006 .

[4]  F. Teppe,et al.  Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors , 2006 .

[5]  K. West,et al.  Resonant frequency response of plasma wave detectors , 2006 .

[6]  A. Shchepetov,et al.  Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors , 2006 .

[7]  Michael S. Shur,et al.  Plasma oscillations in high-electron-mobility transistors with recessed gate , 2006 .

[8]  Michael S. Shur,et al.  Current instability and plasma waves generation in ungated two-dimensional electron layers , 2005 .

[9]  Michael S. Shur,et al.  Resonant excitation of plasma oscillations in a partially gated two-dimensional electron layer , 2005 .

[10]  Michael S. Shur,et al.  Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor , 2005 .

[11]  Michael S. Shur,et al.  Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor , 2005 .

[12]  John L. Reno,et al.  Millimeter wave mixing using plasmon and bolometric response in a double-quantum-well field-effect transistor , 2005 .

[13]  Michael S. Shur,et al.  Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors , 2004 .

[14]  Michael S. Shur,et al.  Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions , 2004 .

[15]  M. Shur,et al.  Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors , 2002 .

[16]  John L. Reno,et al.  Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors , 2002 .

[17]  Michael S. Shur,et al.  Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor , 2002 .

[18]  M. Shur,et al.  Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid , 1996 .

[19]  Shur,et al.  Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. , 1993, Physical review letters.