Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

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[49]  Mantu K. Hudait,et al.  Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications , 2015, Scientific Reports.

[50]  K. Lam,et al.  Enhanced ferroelectricity, piezoelectricity, and ferromagnetism in Nd-modified BiFeO3-BaTiO3 lead-free ceramics , 2014 .

[51]  Venkata Sreenivas Puli,et al.  Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films , 2014 .

[52]  Ram S. Katiyar,et al.  Switchable photovoltaic effect in bilayer graphene/BiFeO3/Pt heterostructures , 2014 .

[53]  P. Misra,et al.  Photovoltaic effect and enhanced magnetization in 0.9(BiFeO3)–0.1(YCrO3) composite thin film fabricated using sequential pulsed laser deposition , 2014 .

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[55]  Y. Ikuhara,et al.  Possible ferroelectricity in perovskite oxynitride SrTaO2N epitaxial thin films , 2014, Scientific Reports.

[56]  Liudi Jiang,et al.  Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio , 2014 .

[57]  Dong-Wook Kim,et al.  Ferroelectricity-induced resistive switching in Pb ( Zr 0 . 52 Ti 0 . 48 ) O 3 / Pr 0 . 7 Ca 0 . 3 MnO 3 / Nb-doped SrTiO 3 epitaxial heterostructure , 2014 .

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[59]  Kui Yao,et al.  A Photovoltaic UV Sensor With a Ferroelectric Thin Film on Transparent Substrate , 2013, IEEE Electron Device Letters.

[60]  Catherine Dubourdieu,et al.  Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode. , 2013, Nature nanotechnology.

[61]  Writam Banerjee,et al.  Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix , 2013, Nanotechnology.

[62]  Thomas Mikolajick,et al.  Key concepts behind forming-free resistive switching incorporated with rectifying transport properties , 2013, Scientific Reports.

[63]  Lu You,et al.  Non-volatile memory based on the ferroelectric photovoltaic effect , 2013, Nature Communications.

[64]  Hosang Lee,et al.  Large Resistive Switching in Ferroelectric BiFeO3 Nano‐Island Based Switchable Diodes , 2013, Advanced materials.

[65]  Shashank Priya,et al.  Room-temperature magnetoelectric coupling in single-phase BaTiO3-BiFeO3 system , 2013 .

[66]  S. Dong,et al.  Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure , 2013 .

[67]  S. Priya,et al.  Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy , 2013 .

[68]  Jinlan Wang,et al.  Ultraviolet photovoltaic effect in BiFeO3/Nb-SrTiO3 heterostructure , 2012 .

[69]  Fei Zeng,et al.  Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices , 2012 .

[70]  Yue Zheng,et al.  Nonpolar resistive switching in Mn-doped BiFeO3 thin films by chemical solution deposition , 2012 .

[71]  Pablo Stoliar,et al.  A Light‐Controlled Resistive Switching Memory , 2012, Advanced materials.

[72]  Hiroyuki Yamada,et al.  Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p‐Type Schottky‐Like Pt/Bi1–δFeO3 Interfaces , 2012 .

[73]  Young Hee Lee,et al.  Chemically doped random network carbon nanotube p-n junction diode for rectifier. , 2011, ACS nano.

[74]  Zhijun Ma,et al.  Large rectifying leakage current in Pt/BaTiO3/Nb:SrTiO3/Pt structure , 2011 .

[75]  C. M. Folkman,et al.  Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects , 2011, 1108.3171.

[76]  Huibin Lu,et al.  Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films , 2011 .

[77]  T. Ren,et al.  Resistance switching and white-light photovoltaic effects in BiFeO3/Nb–SrTiO3 heterojunctions , 2011 .

[78]  E. Defaÿ.  Ferroelectric dielectrics integrated on silicon , 2011 .

[79]  Run-Wei Li,et al.  Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches , 2010, Nanotechnology.

[80]  B. Park,et al.  Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures , 2010 .

[81]  S. Cheong,et al.  Polarization-modulated rectification at ferroelectric surfaces. , 2010, Physical review letters.

[82]  Sergei V. Kalinin,et al.  Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films. , 2009, Nature materials.

[83]  H. Katz,et al.  Solution-processed hybrid p-n junction vertical diode , 2009 .

[84]  Kui Yao,et al.  An Ultraviolet (UV) Detector Using a Ferroelectric Thin Film With In-Plane Polarization , 2008, IEEE Electron Device Letters.

[85]  Q. Jia,et al.  Leakage mechanisms of self-assembled (BiFeO3)0.5:(Sm2O3)0.5 nanocomposite films , 2008 .

[86]  J. Jo,et al.  Structure and ferroelectric properties of epitaxial (1−x)BiFeO3–xBaTiO3 solid solution films , 2008 .

[87]  Sergei V. Kalinin,et al.  Intrinsic single-domain switching in ferroelectric materials on a nearly ideal surface , 2007, Proceedings of the National Academy of Sciences.

[88]  S. Ivanov,et al.  Inverted Core/Shell Nanocrystals Continuously Tunable between Type-I and Type-II Localization Regimes , 2004 .

[89]  K. Saito,et al.  Characterization of Ferroelectric Property of c-axis and non-c-axis Oriented Epitaxially Grown Bismuth Layer-Structured Ferroelectric Thin Films with Different m-numbers Prepared by MOCVD , 2000 .

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[92]  E. A. Kraut,et al.  Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials , 1980 .

[93]  Dirk C. Keene.  Acknowledgements , 1975 .