High Speed 1.1-µm-Range InGaAs-Based VCSELs
暂无分享,去创建一个
Takayoshi Anan | Masayoshi Tsuji | Kenichiro Yashiki | Naofumi Suzuki | Hiroshi Hatakeyama | Kimiyoshi Fukatsu | Keiichi Tokutome | Takeshi Akagawa
[1] J. Boucart,et al. 3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications , 2006, IEEE Photonics Technology Letters.
[2] Jonathan J. Wierer,et al. Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions , 1998 .
[3] J. Fleissner,et al. Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers , 1996, IEEE Photonics Technology Letters.
[4] A. N. Al-Omari,et al. Progress and issues for high-speed vertical cavity surface emitting lasers , 2007, SPIE OPTO.
[5] Scott W. Corzine,et al. Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors , 1992 .
[6] C. Lauer,et al. High-speed modulation up to 10 Gbit/s with 1.55 /spl mu/m wavelength InGaAlAs VCSELs , 2002 .
[7] P. Pepeljugoski,et al. 15.6-Gb/s transmission over 1 km of next generation multimode fiber , 2002, IEEE Photonics Technology Letters.
[8] Hiroyuki Yaguchi,et al. Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures , 1993 .
[9] H. Hatakeyama,et al. 30 Gb/s Over 100-m MMFs Using 1.1-$\mu$ m Range VCSELs and Photodiodes , 2008, IEEE Photonics Technology Letters.
[10] Catherine Caneau,et al. High efficiency long wavelength VCSEL on InP grown by MOCVD , 2003 .
[11] P. Strevens. Iii , 1985 .
[12] S. Kang,et al. A simple rate-equation-based thermal VCSEL model , 1999 .
[13] S. Bounnak,et al. 200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers , 1995, IEEE Photonics Technology Letters.
[14] T. Anan,et al. Low resistance tunnel junctions with type-II heterostructures , 2006 .
[16] P. Pepeljugoski,et al. VCSEL modulation at 20 Gb/s over 200 m of multimode fiber using a 3.3 V SiGe laser driver IC , 2001, 2001 Digest of LEOS Summer Topical Meetings: Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Compo.
[17] P. Tasker,et al. Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers , 1993 .
[18] J. W. Matthews,et al. Defects in epitaxial multilayers: I. Misfit dislocations* , 1974 .
[19] C. S. Wang,et al. High-efficiency, high-speed VCSELs with 35 Gbit=s error-free operation , 2007 .
[20] S. L. Yellen,et al. Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers , 1990, IEEE Photonics Technology Letters.
[21] James K. Guenter,et al. Reliability of various size oxide aperture VCSELs , 2002, 52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345).
[22] Thomas Aggerstam,et al. Large aperture 850nm oxide-confined VCSELs for 10Gb/s data communication , 2002, SPIE OPTO.
[23] Vincent M. Hietala,et al. High-Speed 850 nm Oxide-Confined Vertical Cavity Surface Emitting Lasers , 1997 .
[24] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[25] A. N. Al-Omari,et al. Polyimide-planarized vertical-cavity surface-emitting lasers with 17.0-GHz bandwidth , 2004, IEEE Photonics Technology Letters.
[26] Continuous-wave operation of all-epitaxial InP-based 1.3 /spl mu/m VCSELs with 57% differential quantum efficiency , 2005 .
[27] Continuous Wave Operation of All-Epitaxial InP-Based 1 . 3 μ m VCSELs with 57 % Differential Quantum Efficiency , 2005 .
[28] J. W. Matthews,et al. Defects in epitaxial multilayers , 1974 .
[29] Larry A. Coldren,et al. High‐speed InGaAs/GaAs strained multiple quantum well lasers with low damping , 1991 .