论文信息 - Independent-Double-Gate FINFET SRAM Cell for Drastic Leakage Current Reduction - 字舞流文

Independent-Double-Gate FINFET SRAM Cell for Drastic Leakage Current Reduction

E. Suzuki | K. Ishii | K. Endo | T. Matsukawa | S. O'Uchi | M. Masahara | Yongxun Liu | Y. Ishikawa | J. Tsukada | K. Sakamoto