60 GHz wide-band power amplifier

This paper presents a fully integrated 60 GHz single stage power amplifier with cascode topology. The PA is designed on 0.25 µm SiGe:C BiCMOS technology. The technology provides ft and fmax ≈ 200 GHz. The PA has achieved the 1dB gain bandwidth of more than 9 GHz from 57 GHz to 66 GHz and 3dB gain bandwidth of more than 18 GHz (30 %) from 51 GHz to 69 GHz. The PA has been designed to have the wideband large and small signal gain in the whole range. This has resulted to 1dB gain compression point more than 11.5 dBm and power added efficiency better than 9 % from 57 GHz to 65 GHz. The PA achieves the maximum P1dB of 13.5 dBm at around 58 GHz. The constant gain, high linearity and good PAE for the whole range (57 to 66 GHz) has made this power amplifier quite interesting for 60 GHz applications.

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