To illustrate the challenges and potential of advanced wafer bonding, this paper deals with the boding of silicon wafers, which are patterned and partially oxidized. Two kinds of bonded structures are reported. The buried oxide is patterned in thick and thin regions. The bonded interface can be formed by either Si or SiO/sub 2/ onto either SiO/sub 2/ or mixed Si-SiO/sub 2/ bonding (MSOI structures). In the second case, the pattern of the handle wafer is composed by Si and SiO/sub 2/ structures onto which a Si layer is transferred. The bonded interface is formed by Si/Si and Si/SiO/sub 2/ mixed bonding (PSOI) leading to isolated SOI structures.