Growth, Physics, and Device Applications of InAs-based Nanowires
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[1] U. Gösele,et al. Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy , 2004 .
[2] C Lavoie,et al. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. , 2001, Physical review letters.
[3] G. E. Cirlin,et al. On the non‐monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature , 2004 .
[4] M. Kaiser,et al. Epitaxial growth of InP nanowires on germanium , 2004, Nature materials.
[5] E. Bakkers,et al. Growth kinetics of heterostructured GaP-GaAs nanowires. , 2006, Journal of the American Chemical Society.
[6] R. Chau,et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications , 2004, IEEE Transactions on Nanotechnology.
[7] W. Prost,et al. High Transconductance MISFET With a Single InAs Nanowire Channel , 2007, IEEE Electron Device Letters.
[8] Lars Samuelson,et al. Tunable double quantum dots in InAs nanowires defined by local gate electrodes. , 2005, Nano letters.
[9] B. Joyce,et al. Temporal intensity variations in RHEED patterns during film growth of GaAs by MBE , 1983 .
[10] F. Reif,et al. Fundamentals of Statistical and Thermal Physics , 1965 .
[11] D. Kim,et al. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays , 2004 .
[12] C. Foxon,et al. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique , 1975 .
[13] T. Katsuyama,et al. The Growth Mechanism of Nanometer-scale GaAs, InAs, and AlGaAs Whiskers , 2006 .
[14] M. Kastner,et al. The single-electron transistor , 1992 .
[15] A. Y. Cho,et al. Film Deposition by Molecular-Beam Techniques , 1971 .
[16] Wave-function mapping conditions in open quantum dot structures , 2003, cond-mat/0303399.
[17] Peidong Yang,et al. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires , 2002 .
[18] Lars Samuelson,et al. Electron transport in InAs nanowires and heterostructure nanowire devices , 2004 .
[19] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .
[20] D. DiVincenzo,et al. Quantum computation with quantum dots , 1997, cond-mat/9701055.
[21] D. C. Tsui,et al. Two-Dimensional Magnetotransport in the Extreme Quantum Limit , 1982 .
[22] S. Tarucha,et al. Few-electron quantum dots , 2001 .
[23] R. S. Wagner,et al. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH , 1964 .
[24] W. Walukiewicz. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces , 1988 .
[25] L. Samuelson,et al. InAs1-xPx nanowires for device engineering. , 2006, Nano letters.
[26] Raphael Tsu,et al. Superlattice and negative differential conductivity in semiconductors , 1970 .
[27] N. Yokoyama,et al. Single electron spectroscopy in a single pair of weakly coupled self-assembled InAs quantum dots , 2004 .
[28] Lars Samuelson,et al. Epitaxial III-V nanowires on silicon , 2004 .
[29] S. Kodambaka,et al. Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires. , 2006, Physical review letters.
[30] Walter Riess,et al. Silicon nanowire tunneling field-effect transistors , 2008 .
[31] W. Hume-rothery,et al. The equilibrium diagram of the system gold-indium , 1964, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[32] M. Lundstrom,et al. Essential physics of carrier transport in nanoscale MOSFETs , 2002 .
[33] Konstantin K. Likharev,et al. Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctions , 1986 .
[34] Lars Samuelson,et al. One-dimensional steeplechase for electrons realized , 2002 .
[35] G.E. Moore,et al. Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.
[36] F. Crick,et al. Molecular Structure of Nucleic Acids: A Structure for Deoxyribose Nucleic Acid , 1953, Nature.
[37] E. Lundgren,et al. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy. , 2007, Nano letters.
[38] H. Heinecke,et al. Evaluation of cracking efficiency of As and P precursors , 1997 .
[39] W. Tsang. Chemical beam epitaxy of InP and GaAs , 1984 .
[40] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[41] Charles M. Lieber,et al. Epitaxial core–shell and core–multishell nanowire heterostructures , 2002, Nature.
[42] Paul L. McEuen,et al. Electron Transport in Quantum Dots , 1997 .
[43] C. Gorter,et al. A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths , 1951 .
[44] Lars Samuelson,et al. Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires. , 2005, Nano letters.
[45] M. Leys,et al. Investigations on indium phosphide grown by chemical beam epitaxy , 1995 .
[46] N. V. Sibirev,et al. Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy. , 2006, Physical review. E, Statistical, nonlinear, and soft matter physics.
[47] Noguchi,et al. Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces. , 1991, Physical review letters.
[48] I. Lindau,et al. Unified defect model and beyond , 1980 .
[49] Wonill Ha,et al. Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm $g_{m}$ and 490 GHz $f_{T}$ , 2008, IEEE Electron Device Letters.
[50] J. Plummer,et al. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's , 1997, IEEE Electron Device Letters.
[51] Lars Samuelson,et al. Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self‐Assembled Organic Coatings , 2007 .
[52] Bruce Alberts,et al. Essential Cell Biology , 1983 .
[53] T. Baba. Proposal for Surface Tunnel Transistors , 1992 .
[54] L. Samuelson,et al. Mass transport model for semiconductor nanowire growth. , 2005, The journal of physical chemistry. B.