Transformation of Nanostructured Voids in the Crystallized GeS2-Ga2S3-CsCl Glasses

Transformation of voids in crystallized (80GeS220Ga2S3)100-х(СsCl)x, x = 0; 5; 10; 15 chalcogenide glasses was studied by positron annihilation lifetime spectroscopy. The CsCl content in GeS2-Ga2S3 glassy matrix changed the defect-related component in positron lifetime spectra and confirmed the structural void agglomeration in comparison with the base glass. A larger amount of CsCl in (80GeS2-20Ga2S3)85(СsCl)15 glass resulted in void fragmentation due to loosening of the structure.

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