论文信息 - An HBT noise model valid up to transit frequency

An HBT noise model valid up to transit frequency

A comprehensive HBT noise model for circuit simulation is presented that describes the microwave noise behavior up to the transit frequency. It is based on diode noise theory, and requires only the small-signal equivalent circuit, including the thermal resistance, and the dc bias point. A main feature is correlation of the shot-noise sources at the pn junctions. The model is verified by measurements of the four noise parameters of an InGaP/GaAs HBT, varying frequency and bias conditions.

[1] D. Gasquet,et al. HBT's RF noise parameter determination by means of an efficient method based on noise analysis of linear amplifier networks , 1997 .

[2] Wen-Chau Liu,et al. Measurement of junction temperature of an AlGaAs/GaAs heterojunction bipolar transistor operating at large power densities , 1995 .

[3] Y. Amamiya,et al. Microwave low-noise GaAs HBTs , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[4] L. Escotte,et al. Noise modeling of microwave heterojunction bipolar transistors , 1995 .

[5] Peter Russer,et al. An efficient method for computer aided noise analysis of linear amplifier networks , 1976 .

[6] A. van der Ziel,et al. Noise in Junction Transistors , 1958 .

[7] Edward G. Nielsen,et al. Behavior of Noise Figure in Junction Transistors , 1957, Proceedings of the IRE.

[8] T. Daniel. Bias and temperature dependent noise modeling of HBTs , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[9] H. Fukui,et al. The noise performance of microwave transistors , 1966 .

[10] R. Pritchard,et al. Electrical Characteristics of Transistors , 1967 .

[11] Matthias Rudolph,et al. Direct extraction of HBT equivalent-circuit elements , 1999 .