论文信息 - Very low threshold current density of 1.3-/spl mu/m-range GaInNAsSb-GaNAs3 and 5 QWs lasers

Very low threshold current density of 1.3-/spl mu/m-range GaInNAsSb-GaNAs3 and 5 QWs lasers

The dependence of the threshold current density on the number of wells for 1.3-/spl mu/m-range edge emitting lasers using GaInNAsSb novel material, at which the incorporation of the small amount of Sb make the two-dimensional growth condition wide, is studied. The lowest record ever reported for the threshold current density per well (Jth A/cm/sup 2//well@L=900 /spl mu/m) for 3 QWs lasers was achieved. GaInNAs-based 5 QWs lasers with the very low threshold current density per well of 160 A/cm/sup 2/ were successfully grown for the first time. Therefore, no significant deterioration of Jth is observed even though the number of wells increased up to 5. Since Jth of 5 QWs doesn't increased rapidly compared to SQW and 3 QWs as decreasing the cavity length, it is considered that lower Jth can be obtained by utilizing 5 QWs in devices such VCSELs which use short cavity length.

K. Kumada | Akihiko Kasukawa | Hitoshi Shimizu | Y. Ikenaga | C. Setiagung

[1] A. Kasukawa,et al. High-performance CW 1.26-/spl mu/m GaInNAsSb-SQW ridge lasers , 2001 .

[2] Kouji Nakahara,et al. GaInNAs: a novel material for long-wavelength semiconductor lasers , 1997 .

[3] Eicke R. Weber,et al. Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy , 1999 .

[4] K. Kumada,et al. High performance CW 1.26 µm GaInNAsSb-SQW and 1.20 µm GaInAsSb-SQW ridge lasers , 2000 .

[5] Kenichi Iga,et al. Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition , 2001 .

[6] P. Studenkov,et al. Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers , 2000, IEEE Photonics Technology Letters.

[7] L. Mawst,et al. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers , 2002, IEEE Photonics Technology Letters.

[8] Henning Riechert,et al. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 /spl mu/m , 2000 .

[9] W.I. Wang,et al. Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy , 2000, IEEE Photonics Technology Letters.