论文信息 - with InGaN back-barrier

with InGaN back-barrier

Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionization in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled to reveal hole generation due to impact ionization. Hole currents as low as 10pA were detectable by the optical technique used.

Martin Kuball | Tomas Palacios | Milan Ťapajna | M. Faqir | N. Killat

[1] V. Tilak,et al. Impact ionization in high performance AlGaN/GaN HEMTs , 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

[2] S. Keller,et al. AlGaN/GaN high electron mobility transistors with InGaN back-barriers , 2006, IEEE Electron Device Letters.

[3] Tetsuya Suemitsu,et al. Optical study of high-biased AlGaN/GaN high-electron-mobility transistors , 2002 .

[4] A. Paccagnella,et al. Impact ionization and light emission in AlGaAs/GaAs HEMT's , 1992 .

[5] P. Han,et al. Observation of hole accumulation at the interface of an undoped InGaN/GaN heterostructure , 2009 .

[6] Phil Dawson,et al. Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells , 2005 .

[7] Michael S. Shur,et al. TEMPERATURE DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS , 1998 .

[8] K. Kunihiro,et al. Experimental evaluation of impact ionization coefficients in GaN , 1999, IEEE Electron Device Letters.