Improvements in strain‐balanced InGaAs/GaAs optical modulators for 1047‐nm operation

We demonstrate a self‐electro‐optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain‐balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13‐V reverse bias, and have found 99% photodetection quantum efficiency under the built‐in junction field. Bistability in a resistor‐SEED configuration is demonstrated.

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