Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.

[1]  Partha S. Dutta,et al.  The physics and technology of gallium antimonide: An emerging optoelectronic material , 1997 .

[2]  Ming‐Chung Wu,et al.  Photoluminescence of liquid‐phase epitaxial Te‐doped GaSb , 1993 .

[3]  Roger Grimes,et al.  Vacancies and defect levels in III-V semiconductors , 2013 .

[4]  Nouman Zia,et al.  High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element , 2016 .

[5]  Xiaoyun Fan,et al.  A novel technique for Czochralski growth of GaSb single crystals , 1993 .

[6]  Tong Liu,et al.  Thermally induced native defect transform in annealed GaSb , 2016 .

[7]  M. Shvarts,et al.  Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence , 2010 .

[8]  Dongsheng Li,et al.  Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays , 2016 .

[9]  R. Magnanini,et al.  Photoluminescence study of heavy doping effects in Te-doped GaSb , 1997 .

[10]  B. Lux,et al.  LEC growth of semi-insulating GaAs crystals in traveling magnetic field generated in a heater–magnet module , 2009 .

[11]  Shumin Wang,et al.  Point defect balance in epitaxial GaSb , 2014 .

[12]  P. Dutta,et al.  Photoluminescence studies in bulk gallium antimonide , 1995 .

[13]  Stephanie E. Tritchler,et al.  Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method , 2010 .

[14]  Shao-jie Wang,et al.  Gallium antisite defect and residual acceptors in undoped GaSb , 2004 .

[15]  P. S. Dutta,et al.  Below bandgap optical absorption in tellurium-doped GaSb , 2005 .

[16]  F. Tuomisto,et al.  Native point defects in GaSb , 2014 .

[17]  Ming‐Chung Wu,et al.  Electrical and photoluminescent properties of high‐quality GaSb and AlGaSb layers grown from Sb‐rich solutions by liquid‐phase epitaxy , 1995 .

[18]  Youwen Zhao,et al.  N-type GaSb single crystals with high below-band gap transmission , 2017 .

[19]  P. Dutta,et al.  Enhancement of infrared transmission in GaSb bulk crystals by carrier compensation , 2004 .

[20]  William C. Mitchel,et al.  InAs/GaSb type-II superlattices for high performance mid-infrared detectors , 2005 .