A 5 V-only 16 Mb flash memory with sector-erase mode

A 5-V-only 16-Mb CMOS flash memory with sector erase mode which uses 0.6- mu m double-layer metal CMOS technology is described. The optimized memory cell and channel erase are keys to 5-V-only operation. With this erase method, positive pulses are applied to the channel area and negative high-voltage pulses are applied to a control gate using row decoders, realizing a 512-word sector erase.<<ETX>>