Characterization of a new device for pressure sensing: the AlGaAs/GaAs TEGFET
暂无分享，去创建一个
[1] P. Delescluse,et al. Hydrostatic pressure control of the carrier density in GaAs/GaAlAs heterostructures; Role of the metastable deep levels , 1984 .
[2] A. Springthorpe,et al. Electron transport and band structure of Ga 1-x Al x As alloys , 1980 .
[3] R. Logan,et al. Pressure and compositional dependences of the hall coefficient in Al x Ga 1-x As and their significance , 1980 .
[4] P. Guétin,et al. Tunneling in n -Type-GaAs-Pb Contacts under Pressure , 1972 .