Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low-inductance ground to the package using through-silicon vias (TSVs) that results in a competitive solution for future multiband and multimode PA integration. The tungsten-filled, multifinger, bar-shaped TSV delivers more than a 75% reduction in inductance compared to a traditional wirebond. This enables higher frequency applications with a roughly 20% reduction in die area without compromising the technology reliability for use conditions in a low-cost plastic QFN (quad flat no leads) package. In this paper we demonstrate the commercial feasibility of the TSV, its RF performance, its reliability, and its usefulness in a demanding WiMAX® (Worldwide Interoperability for Microwave Access) PA application.

[1]  H.G.A. Huizing,et al.  High performance SiGeC HBT integrated into a 0.25 /spl mu/m BiCMOS technology featuring record 88% power-added efficiency , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[2]  H. Lafontaine,et al.  Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications , 2007, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[3]  E. Gebreselasie,et al.  A 0.35 μm SiGe BiCMOS technology for power amplifier applications , 2007, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[4]  S. Lloyd.  Challenges of Mobile WiMAX RF Transceivers , 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

[5]  Alvin J. Joseph,et al.  Current status and future trends of SiGe BiCMOS technology , 2001 .

[6]  Robert Rosenberg,et al.  The effect of current density, stripe length, stripe width, and temperature on resistance saturation during electromigration testing , 2002 .

[7]  F. Laermer,et al.  Milestones in deep reactive ion etching , 2005, The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05..

[8]  P. Zampardi.  Performance and Modeling of Si and SiGe for Power Amplifiers , 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[9]  P.-O. Brandt,et al.  Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications , 2004, IEEE Journal of Solid-State Circuits.

[10]  A. Schuppen,et al.  SiGe-power amplifiers in flipchip and packaged technology , 2001, 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173).

[11]  J. Paramesh,et al.  A 90-nm CMOS Doherty power amplifier with minimum AM-PM distortion , 2006, IEEE Journal of Solid-State Circuits.

[12]  H.S. Bennett,et al.  Device and technology evolution for Si-based RF integrated circuits , 2005, IEEE Transactions on Electron Devices.

[13]  J. Johnson,et al.  Collector optimization in advanced SiGe HBT technologies , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..