Advanced Analysis Technology for New Material and Product Development

Furukawa Electric (FEC) offers a wide variety of products and fosters next-generation business based on the core technologies of photonics, polymers, metals, and highfrequency electronics. Examples in the photonics field include optical fibers, products related to the semiconductor laser diode etc. In the field of polymer technology application, various products include the tapes for semiconductors as well as various foamed products. In the metal field, typical products include copper alloys, oxygen-free copper, and aluminum blanking material for memory disks. At the actual sites where new products are developed, it is important to have a thorough understanding of the materials that define the products. The relevant characteristics can be obtained by properly understanding compound semiconductors (GaAs, InP, etc.) in the case of the semiconductor laser diode, copper and aluminum in the case of metal products, and the adhesive compound in the case of the tape used for semiconductors. In order to understand each material, the Analysis Technology Center at FEC has been analyzing the materials for the products manufactured in the plants and under development by using various analytical equipment. An overview of the roles undertaken of the Analysis Technology Center is provided in Figure 1. In the case of products currently under development, the elucidation of the mechanism behind the function expression and the characteristics of the new materials is carried out and then utilized as design guidelines for the new products. Also, when any type of problem occurs at the plant, we investigate the cause immediately from the viewpoint of material analysis and facilitate the problem solving.

[1]  K. Sasaki,et al.  Differential Potential Distribution Observation in Transmission Electron Microscope with Conventional Thermal Electron Gun , 2018, Microscopy and Microanalysis.

[2]  N. Shibata,et al.  Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography , 2017 .

[3]  Takao Matsumoto,et al.  Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy , 2015, Scientific Reports.

[4]  J. Yoshida,et al.  Analysis of Semiconductor Laser Diode Using Off-axis Electron Holography and Lorentz Microscopy , 2015 .

[5]  N. Tanaka,et al.  Quantitative phase imaging of electron waves using selected-area diffraction , 2012 .

[6]  Naoya Shibata,et al.  Differential phase-contrast microscopy at atomic resolution , 2012, Nature Physics.

[7]  T. Hashimoto,et al.  Analysis of Cu segregation to oxide–metal interface of Ni‐base alloy by HX‐PES , 2008 .

[8]  A. Kimura,et al.  Characterization of SiNx/GaxIn1-xAs Interface using Hard X-ray Photoemission Spectroscopy , 2007 .

[9]  T. Hirayama,et al.  Mapping of dopant concentration in a GaAs semiconductor by off-axis phase-shifting electron holography , 2006 .

[10]  Y. Sasaki,et al.  Nanostructural characterization of Y123 and Gd123 with BaZrO3 rods fabricated by pulsed-laser deposition , 2006 .

[11]  S. Horii,et al.  Evaluation of metallic nanoparticles in REBa2Cu3O7−δ (RE = Y, Gd) thin films by small angle X-ray scattering , 2006 .

[12]  T. Ishikawa,et al.  Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy , 2004 .

[13]  Q. X. Jia,et al.  Strongly enhanced current densities in superconducting coated conductors of YBa2Cu3O7–x + BaZrO3 , 2004, Nature materials.

[14]  K. Sasaki,et al.  Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam , 2002 .

[15]  Peter Schwander,et al.  TWO-DIMENSIONAL MAPPING OF THE ELECTROSTATIC POTENTIAL IN TRANSISTORS BY ELECTRON HOLOGRAPHY , 1999 .

[16]  Gregory Beaucage,et al.  Approximations Leading to a Unified Exponential/Power-Law Approach to Small-Angle Scattering , 1995 .

[17]  David J. Smith,et al.  Direct observation of potential distribution across Si/Si p-n junctions using off-axis electron holography , 1994 .