High performance 0.25 /spl mu/m SiGe and SiGe:C HBTs using non selective epitaxy

A robust 0.25 /spl mu/m double-poly SiGe HBT structure using non selective epitaxy has been developed. The device features 70/90 GHz f/sub T//f/sub max/ with pure SiGe base in 0.25 /spl mu/m BiCMOS technology. Performances up to 120/100 GHz f/sub T//f/sub max/ are demonstrated for SiGe:C base transistors.