论文信息 - High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

A 5-Gb/s data modulation and transmission is investigated using Fabry-Pe/spl acute/rot InGaAs quantum-dot lasers emitting at approximately 1.3 /spl mu/m. Error-free transmission of 5-Gb/s data at room temperature over 4 km of single-mode fiber (SMF) and over 500 m of installed grade multimode fiber are demonstrated for the first time. The temperature dependence of the data modulation performance is also studied. We report error-free 2.5-Gb/s data modulation up to 50/spl deg/C and transmission over 4 km of SMF with a Q-factor penalty of 0.5 dB. Error-free 5-Gb/s data modulation is observed up to 30/spl deg/C and 5-Gb/s data transmission over 4 km of SMF with a Q-factor penalty of 0.8 dB is obtained at 40/spl deg/C. The lack of overshoot and ringing in the eye diagrams is attributed to the large damping factor observed under small-signal modulation.

[1] S. Sugou,et al. Low chirp operation in 1.6 /spl mu/m quantum dot laser under 2.5 GHz direct modulation , 2001 .

[2] Dennis G. Deppe,et al. The role of p-type doping and the density of states on the modulation response of quantum dot lasers , 2002 .

[3] Ian H. White,et al. A statistical analysis of conditioned launch for gigabit ethernet links using multimode fiber , 1999 .

[4] Jasprit Singh,et al. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers , 2003 .

[5] Luke F. Lester,et al. InAs quantum dot DFB lasers on GaAs for uncooled 1310 nm fiber communication , 2003, OFC 2003 Optical Fiber Communications Conference, 2003..

[6] D. Deppe,et al. InGaAs/GaAs quantum dot lasers , 1998, Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).

[7] Nikolai N. Ledentsov,et al. Quantum dot heterostructures , 1999 .

[8] Mikhail V. Maximov,et al. InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with high (88%) differential efficiency , 2002 .

[9] Nikolai N. Ledentsov,et al. InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition , 1997 .

[10] Diana L. Huffaker,et al. InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature , 2000 .