Characterization and modeling of bias-stressed InGaP/GaAs collector-up tunneling-collector HBTs fabricated with boron-ion implantation
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H. Uchiyama | K. Mochizuki | H. Ohta | A. Terano | T. Taniguchi | R. Mita | T. Kikawa | K.-I. Tanaka
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H. Uchiyama | K. Mochizuki | H. Ohta | A. Terano | T. Taniguchi | R. Mita | T. Kikawa | K.-I. Tanaka