论文信息 - Kinetics and mechanism of reaction at room temperature in thin Au/metal couples

Kinetics and mechanism of reaction at room temperature in thin Au/metal couples

Abstract The reaction kinetics of compound formation at room temperature in thin film Au/Me (Me = Al, Cd, Ga, In, Pb, Sb, Sn, Zn) couples have been investigated by X-ray diffraction. The decrease in the (111) diffraction peak of gold or of the metal, or the increase in the diffraction peak of the corresponding compound, has been followed as a function of time. These reactions were found to be diffusion controlled. The interdiffusion coefficients have been calculated for the investigated couples and the relation D = 3.66 × 10-11 exp(-0.015Tt) has been found to exist between the diffusion coefficient D(cm2s-1) and the melting temperature Tt(K) of the metal.

Z. Marinković | V. Simić | V. Simić | Ž. Marinković

[1] S. Murarka. Interactions in metallization systems for integrated circuits , 1984 .

[2] R. Balluffi,et al. Special aspects of diffusion in thin films , 1975 .

[3] J. DuMond,et al. An X-Ray Method of Determining Rates of Diffusion in the Solid State , 1940 .

[4] R. C. Sun,et al. Internal stresses and interdiffusion of Ti-Pd-Au films studied by X-ray diffraction techniques , 1972 .

[5] C. Weaver,et al. Diffusion in evaporated films of gold - lead , 1963 .

[6] Z. Marinković,et al. Thin film interdiffusion of Au and In at room temperature , 1976 .

[7] Z. Marinković,et al. Room temperature interactions in Au/metal and Al/metal thin film couples , 1981 .

[8] L. C. Brown,et al. Diffusion in evaporated films of gold-aluminium , 1962 .

[9] Z. Marinković,et al. Conditions for compound formation in Au/metal couples at room temperature , 1986 .

[10] Z. Marinković,et al. Dependence of the crystal orientation of thin evaporated Bi films on the substrate structure , 1976 .