New continuous heterostructure field-effect-transistor model and unified parameter extraction technique

A continuous model for heterostructure field-effect transistors (HFETs) suitable for circuit simulation and device characterization is proposed. The model is based on the analytical solution of a two-dimensional Poisson equation in the saturation region. The HFET saturation current and saturation voltage have been experimentally determined by differentiating the output characteristics in a unified and unambiguous way. The results are used for the systematic extraction of device and process parameters. The deduced values agree well with other independent measurements. The results of experimental studies of HFETs with nominal gate lengths of 1, 1.4, 2, and 5 mu m are reported. The models and techniques presented here are successfully applied to all these devices. A large short-channel effect is observed for the 1- mu m-gate HFET. The gate length dependences of the device parameters determined by the method reveal that the effective gate length in the self-aligned structures is approximately 0.25 mu m shorter than the nominal gate length. >

[1]  M.H. White,et al.  An experimental method for the determination of the saturation point of a MOSFET , 1984, IEEE Journal of Solid-State Circuits.

[3]  H. Morkoc,et al.  Model for modulation doped field effect transistor , 1982, IEEE Electron Device Letters.

[4]  R. R. Troutman,et al.  VLSI limitations from drain-induced barrier lowering , 1979 .

[5]  T.N. Nguyen,et al.  Physical mechanisms responsible for short channel effects in MOS devices , 1981, 1981 International Electron Devices Meeting.

[6]  Michael S. Shur,et al.  Short channel effects in submicron self-aligned gate heterostructure field effect transistors , 1988, Technical Digest., International Electron Devices Meeting.

[7]  M. Shur,et al.  Substrate current in GaAs MESFET's , 1979, IEEE Transactions on Electron Devices.

[8]  R.L. Johnston,et al.  Experimental derivation of the source and drain resistance of MOS transistors , 1980, IEEE Transactions on Electron Devices.

[9]  M. Shur,et al.  Parallel Conduction Correction to Measured Room Temperature Mobility in (Al, Ga)As–GaAs Modulation Doped Layers , 1984 .

[10]  H. Morkoc,et al.  Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors , 1983, IEEE Transactions on Electron Devices.

[11]  Y. Ayasli,et al.  DC and microwave models for Al x Ga 1-x As/GaAs high electron mobility transistors , 1984 .

[12]  Chian-Sern Chang,et al.  An analytic model for HEMT's using new velocity-field dependence , 1987, IEEE Transactions on Electron Devices.

[13]  D. F. Nelson,et al.  High‐field drift velocity of electrons at the Si–SiO2 interface as determined by a time‐of‐flight technique , 1983 .

[14]  Michael S. Shur,et al.  Distributive nature of gate current and negative transconductance in heterostructure field-effect transistors , 1989 .

[15]  S. Kuroda,et al.  Current-gain cutoff frequency comparison of InGaAs HEMTs , 1988, IEEE Electron Device Letters.

[16]  Michael S. Shur,et al.  Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's , 1985 .

[17]  M. Shur,et al.  Unified charge control model and subthreshold current in heterostructure field-effect transistors , 1990, IEEE Electron Device Letters.

[18]  Kae Dal Kwack,et al.  A model for the current—Voltage characteristics of MODFET's , 1986 .

[19]  C.G. Sodini,et al.  The effect of high fields on MOS device and circuit performance , 1984, IEEE Transactions on Electron Devices.

[20]  H. Morkoc,et al.  Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization , 1984, IEEE Transactions on Electron Devices.

[21]  H. Fukui,et al.  Determination of the basic device parameters of a GaAs MESFET , 1979, The Bell System Technical Journal.

[22]  M. Shur,et al.  FET Characterization using gated-TLM structure , 1985, IEEE Transactions on Electron Devices.

[23]  R. F. Motta,et al.  A new method to determine MOSFET channel length , 1980, IEEE Electron Device Letters.

[24]  Y.A. El-Mansy,et al.  A simple two-dimensional model for IGFET operation in the saturation region , 1977, IEEE Transactions on Electron Devices.

[25]  W. Kopp,et al.  Determination of carrier saturation velocity in short-gate-length modulation-doped FET'S , 1984, IEEE Electron Device Letters.