Mixed signal integrated circuits based on GaAs HEMTs

During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLLs, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array.

[1]  Z.-G. Wang,et al.  20-40 Gbit/s 0.2 /spl mu/m GaAs HEMT chip set for optical data receiver , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[2]  Wolfgang Bronner,et al.  7.4 Gbit monolithically integrated GaAs/AlGaAs laser diode-laser driver structure , 1993 .

[3]  W. Walter,et al.  High-speed gallium-arsenide Schottky-barrier field-effect transistors , 1970 .

[4]  Z.-G. Wang,et al.  20 Gb/s Monolithic Integrated Clock Recovery and Data Decision , 1994, ESSCIRC '94: Twientieth European Solid-State Circuits Conference.

[5]  Wolfgang Bronner,et al.  14 GHz bandwidth MSM photodiode AlGaAs/GaAs HEMT monolithic integrated optoelectronic receiver , 1993 .

[6]  Wolfgang Bronner,et al.  28-51 GHz dynamic frequency divider based on 0.15 mu m T-gate Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As MODFETs , 1993 .

[7]  M. Rieger-Motzer,et al.  A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[8]  R.C. Eden,et al.  The prospects for ultrahigh-speed VLSI GaAs digital logic , 1979, IEEE Transactions on Electron Devices.

[9]  Wolfgang Bronner,et al.  10GBIT/S LONG-WAVELENGTH MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER GROWN ON GAAS , 1996 .

[10]  Wolfgang Bronner,et al.  28-51 GHz dynamic frequency divider based on 0.15 μm T-gate Al0.2Ga0.8As/In0.25Ga0.75As MODFETs , 1993 .

[11]  S. I. Long,et al.  MA-4 the prospects for ultra-high speed VLSI GaAs digital logic , 1978 .

[12]  C. A. Liechti,et al.  Microwave Field-Effect Transistors--1976 , 1976 .

[13]  M. Rieger-Motzer,et al.  31 GHz Static and 39 GHz Dynamic Frequency Divider ICs Using 0.2 μm-AlGaAs/GaAs-HEMTs , 1996, ESSCIRC '96: Proceedings of the 22nd European Solid-State Circuits Conference.

[14]  H. Ishikawa,et al.  A GaAs 16×16b parallel multiplier using self alignment technology , 1983, 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[15]  H. Morkoc,et al.  Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers , 1984, IEEE Transactions on Electron Devices.

[16]  Michael Schlechtweg,et al.  Design and Characterization of High 60 GHz Pseudomorphic MODFET LNAs Performance in CPW-Technology Based on Accurate Sparameter and Noise Models , 1992 .

[17]  Wolfgang Bronner,et al.  Integration of a Quantum Well Laser with AlGaAs/GaAs-HEMT Electronics , 1993 .

[18]  B. Raynor,et al.  17 GHz-bandwidth 17 dB-gain 0.3 /spl mu/m-HEMT low-power limiting amplifier , 1995, Digest of Technical Papers., Symposium on VLSI Circuits..

[19]  Michael Schlechtweg,et al.  Design and characterization of high performance 60 GHz pseudomorphic MODFET LNAs in CPW-technology based on accurate S-parameter and noise models , 1992 .

[20]  Wolfgang Bronner,et al.  20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver , 1996 .

[21]  Manfred Berroth,et al.  High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .

[22]  M. Berroth,et al.  A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[23]  M. Rieger-Motzer,et al.  30 GHz static frequency divider using a 0.2 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology , 1995 .

[24]  Z.-G. Wang,et al.  Single-Chip 4 Bit 35 GHz Phase-Shifting Receiver with a Gb/s Digital Interface Circuitry , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[25]  S. Canaga,et al.  A high performance GaAs gate array family , 1989, 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.

[26]  M. Rieger-Motzer,et al.  Sub-nanosecond access time 2K sine-cosine-ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology , 1997 .

[27]  A. Thiede,et al.  16*16 bit parallel multiplier based on 6 K gate array with 0.3 mu m AlGaAs/GaAs quantum well transistors , 1992 .

[28]  M. Suzuki,et al.  A 40-ps high electron mobility transistor 4.1 K gate array , 1988 .

[29]  M. Berroth,et al.  25 Gb/s AGC amplifier, 22 GHz transimpedance amplifier and 27.7 GHz limiting amplifier ICs using AlGaAs/GaAs-HEMTs , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[30]  Wolfgang Bronner,et al.  18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs , 1992 .

[31]  M. Berroth,et al.  10 Gbit/s long wavelength monolithic integrated optoelectronic receiver grown on GaAs , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

[32]  Manfred Berroth,et al.  15 Gbit/s integrated laser diode driver using 0.3 μm gate length quantum well transistors , 1992 .

[33]  A. Thiede,et al.  40 and 20 Gbit/s monolithic integrated clock recovery using a fully-balanced narrowband regenerative frequency divider with 0.2 /spl mu/m AlGaAs/GaAs HEMTs , 1996 .

[34]  Wolfgang Bronner,et al.  20-40 Gbit/s GaAs-HEMT chip set for optical data receiver , 1998 .

[35]  R. Tuyl,et al.  High-speed integrated logic with GaAs MESFET's , 1974 .

[36]  A. Thiede,et al.  40 GHz monolithically-integrated fully-balanced VCO using 0.3 /spl mu/m HEMTs , 1997 .

[37]  Wolfgang Bronner,et al.  20-40 Gbit/s 0.2 /spl mu/m GaAs HEMT chip set for optical data receiver , 1996 .

[38]  M. Rieger-Motzer,et al.  A completely integrated single-chip PLL with a 34 GHz VCO using 0.2 /spl mu/m E-/D-HEMT-technology , 1997, Proceedings of CICC 97 - Custom Integrated Circuits Conference.

[39]  B. Raynor,et al.  Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's , 1993 .

[40]  A. Thiede,et al.  High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[41]  Z.-G. Wang,et al.  10 Gb/s Monolithic Optoelectronic Integrated Receiver with Clock Recovery, Data Decision, and 1:4 Demultiplexer , 1995, ESSCIRC '95: Twenty-first European Solid-State Circuits Conference.

[42]  C. R. Cole,et al.  CMOS/SOS frequency synthesizer LSI circuit for spread spectrum communications , 1984 .

[43]  H. Massler,et al.  110 GHz amplifiers based on compact coplanar W-band receiver technology , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[44]  Michael Schlechtweg,et al.  35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs , 1997 .

[45]  Z.-G. Wang,et al.  10 and 20 Gbit/s clock recovery GaAs IC with 288° phase-shifting function , 1996 .

[46]  M. Rieger-Motzer,et al.  17 GHz broadband amplifier with 25 dB gain using a 0.3 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology , 1995 .

[47]  T. Jakobus,et al.  E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits , 1990 .