Analysis of MOSFET model for low-voltage applications

Different low-voltage and low-power techniques, which meets modern integrated circuit design requirements, appears as the key towards achievement of enhanced performance of designed circuits. For deep sub-micron technologies, choosing a suitable transistor model becomes very important. Conventional MOS transistor models, such as BSIM or PSP, are developed for conventional gate-driven applications. These models might not be accurate enough for non-standard low-voltage design approaches, such as bulk-driven technique. In this paper, basic topologies of bulk-driven current mirrors have been simulated using BSIM MOSFET models. Simulated data will be later compared to the measured data obtained from fabricated devices. Consequently, so-called EKV model parameters will be extracted from measurements of fabricated MOSFET structures to demonstrate the importance of infinite order of continuity for all operating regions of MOSFET device.