Laser Chemical Vapor Deposition of Titanium Nitride and Process Diagnostics With Laser-Induced Fluorescence Spectroscopy

With gaseous precursors of TiCl4, H2, and N2, titanium nitride (TiN) films have been deposited on Ti-6A1-4V alloy substrates by a cw CO2 laser chemical vapor deposition (LCVD) process. Transient Ti atomic concentration above the substrate is measured by laser induced fluorescence (LEF) spectroscopy. Surface temperature during deposition is obtained by multi-wavelength pyrometry. Stylus profilometry and Auger electron spectroscopy (AES) yield film growth rates and compositions. Relationships between the growth rate and TiCl4, H2, and N2 partial pressures are established, from which the rate-controlling reactions and activation energy are obtained.

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