Advanced technology for after-develop inspection

This paper describes a methodology for after-develop inspection (ADI) using a broadband DUV/UV/visible brightfield inspector with a unique optical mode. The VIB (Varied Illumination Brightfield) optical mode enables capture of unique killer defects at low nuisance rate on certain 45nm and 32nm ADI layers, significantly improving litho inspection sensitivity. By implementing this inspection, defect engineers were able to detect critical excursions at ADI rather than at later process steps. This shortened process development time and allowed for re-work, significantly reducing wafer cost.