论文信息 - Evidence, by transport measurements under hydrostatic pressure, of resonant level induced by implantation defects in expitaxial layers of Hg1−xCdxTe - 字舞流文

Evidence, by transport measurements under hydrostatic pressure, of resonant level induced by implantation defects in expitaxial layers of Hg1−xCdxTe

L. Ghenim | G. Destefanis | J. Robert | C. Bousquet | A. Raymond

[1] A. Hurrle,et al. Boron ion implantation in Hg1−xCdxTe , 1982 .

[2] Y. Nemirovsky,et al. Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te , 1979 .