IGBT operation at cryogenic temperatures: non-punch-through and punch-through comparison

Detailed experimental data taken for punch through (PT) and non punch through (NPT) IGBTs are presented. The test program covered IGBT devices rated for 100-600 A and 600-1200 V from different manufacturers. The forward conduction drops and switching behavior of the IGBTs are examined over a temperature range of 4.2 to 295 K. Physical behavior at low junction temperatures is analyzed. Different behavior of the two structures at cryogenic temperatures is highlighted and the better performances of the NPT technology are shown.

[1]  B. Lengeler,et al.  Semiconductor devices suitable for use in cryogenic environments , 1974 .

[2]  Bantval J. Baliga,et al.  Cryogenic operation of asymmetric N-channel IGBTs , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[3]  B. Jayant Baliga,et al.  Cryogenic operation of p-i-n power rectifiers , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[4]  Jerry L. Hudgins,et al.  Temperature variation effects in MCTs, IGBTs, and BMFETs , 1993, Proceedings of IEEE Power Electronics Specialist Conference - PESC '93.

[5]  R. Singh,et al.  Cryogenic operation of PiN power rectifiers , 1994 .

[6]  Cryogenic operation of asymmetric n-channel IGBTs , 1995 .

[7]  O. Mueller,et al.  Properties of high-power Cryo-MOSFETs , 1996, IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting.

[8]  F. Rosenbauer,et al.  Behaviour of IGBT Modules in the Temperature Range from 5 to 300 K , 1996 .

[9]  S. Kolluri.  Application of distributed superconducting magnetic energy storage system (D-SMES) in the entergy system to improve voltage stability , 2002, 2002 IEEE Power Engineering Society Winter Meeting. Conference Proceedings (Cat. No.02CH37309).

[10]  Jerry L. Hudgins,et al.  Cryogenic study and modeling of IGBTs , 2003, IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03..