论文信息 - Line integration HgCdTe focal plane array

Line integration HgCdTe focal plane array

Line integration 384 × 288 Focal Plane Array (FPA) consists of HgCdTe (MCT) photodiodes array formed in the mercury cadmium telluride p-type epitaxial layers grown both by liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). Grown by these methods MCT layers have multilayer compound structure. Silicon readout integration circuit (ROIC) performs the photocurrents integration during one line signals output (one row of pixels) period, and signals multiplexing in two output channels from the focal plane. The photodiodes array pitch in each direction is 28 μm. The influence of MCT surface irregularities and imperfections of MCT epitaxial layers on number of defective elements is investigated.

[1] K. O. Boltar,et al. Crosstalk investigations in HgCdTe staring focal plane arrays , 1999, Other Conferences.

[2] Yuri G. Sidorov,et al. 128x128 and 384x288 HgCdTe staring focal plane arrays , 1999, Other Conferences.

[3] Yu. G. Sidorov,et al. Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy , 2005 .

[4] Yuri G. Sidorov,et al. 384 X 288 HgCdTe staring focal plane array , 2000, Other Conferences.

[5] K. O. Boltar,et al. HgCdTe photodiodes current-voltage characteristics simulation , 2003, Saratov Fall Meeting.

[6] M. Schulz,et al. Correctability and long-term stability of infrared focal plane arrays , 1999 .

[7] K. O. Boltar,et al. IR imager based on a 128x128 HgCdTe staring focal plane array , 1999, Other Conferences.