A Family of High-Frequency Single-Switch DC–DC Converters With Low Switch Voltage Stress Based on Impedance Networks

This paper presents a novel family of single-switch resonant dc–dc converters with low switch voltage stress. The single-switch resonant converter which has a ground-referenced switch is advantageous for implementing the gate drive circuit and operating at several-MHz switching frequency. However, the conventional ones mostly have high voltage stress on the switch, roughly 4–5 times the input voltage. In this paper, we propose the single-switch converter topologies derived from the drain-source impedance networks consisting of two inductors and two capacitors. The switch voltage of the proposed converters is shaped into a near trapezoid by designing the resonant networks to have the desired drain-source impedance. Furthermore, a simple and specific design scheme is presented here so that the peak switch voltage is lowered to 2.2–2.5 times the input voltage while zero voltage switching is achieved. Experimental results from a 20-W GaN-based prototype operating at 10 MHz demonstrate the feasibility of the proposed converter topologies and the design method.

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