Role of plasma-aided manufacturing in semiconductor fabrication

A brief review is presented of the application of plasma-aided manufacturing to semiconductor fabrication. Emphasis is placed on current state-of-the-art techniques for which plasma physics plays a significant role and on current problems that remain to be solved.

[1]  Real-Time Monitoring and Control of Plasma Etching , 1998 .

[2]  E. Pfender.  Advances in modeling of the thermal spray process , 1997 .

[3]  Jeffrey Hopwood,et al.  Review of inductively coupled plasmas for plasma processing , 1992 .

[4]  C. Doughty,et al.  Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid system , 1996 .

[5]  D. C. Meister,et al.  Ion energy and angular distributions in inductively coupled radio frequency discharges in argon , 1996 .

[6]  Kenji Nakamura,et al.  Electrostatic Coupling of Antenna and the Shielding Effect in Inductive RF Plasmas , 1994 .

[7]  Jane P. Chang,et al.  Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl2, and Cl+ beam scattering , 1997 .

[8]  Kando,et al.  Negative ions in a radio-frequency oxygen plasma. , 1995, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[9]  M. Nagatsu,et al.  High-density flat plasma production based on surface waves , 1998 .

[10]  J. Amorim,et al.  On the use of actinometry to measure the dissociation in O2 DC glow discharges: determination of the wall recombination probability , 1995 .

[11]  J. R. Conrad,et al.  Plasma source ion-implantation technique for surface modification of materials , 1987 .

[12]  K. Nakamura,et al.  Negative ion measurements and etching in a pulsed-power inductively coupled plasma in chlorine , 1996 .

[13]  Duane S. Boning,et al.  Endpoint prediction for polysilicon plasma etch via optical emission interferometry , 1997 .

[14]  A. Lichtenberg,et al.  Principles of Plasma Discharges and Materials Processing , 1994 .

[15]  Baldur Eliasson,et al.  Dielectric-Barrier Discharges. Principle and Applications , 1997 .

[16]  Bernd Ebersberger,et al.  Tungsten Chemical Mechanical Polishing , 1998 .

[17]  Roderick Boswell,et al.  Capacitive, inductive and helicon‐wave modes of operation of a helicon plasma source , 1996 .

[18]  A. Jentzsch,et al.  Novel high density plasma tool for large area flat panel display etching , 1995, IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012).

[19]  J. McVittie,et al.  The effect of the presheath on the ion angular distribution at the wafer surface , 1995 .

[20]  J. Keller,et al.  Inductive plasmas for plasma processing , 1996 .

[21]  D. Graves,et al.  Charging, transport and heating of particles in radiofrequency and electron cyclotron resonance plasmas , 1994 .

[22]  Nobuo Fujiwara,et al.  Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma , 1995 .

[23]  Masami Hane,et al.  Notching as an example of charging in uniform high density plasmas , 1996 .

[24]  A. Lichtenberg,et al.  Modelling plasma discharges at high electronegativity , 1997 .

[25]  N. Hershkowitz,et al.  Does high density-low pressure etching depend on the type of plasma source? , 1996 .

[26]  Jonathan P. Williams,et al.  Overview of growth and behaviour of clusters and particles in plasmas , 1994 .

[27]  James W. Taylor,et al.  Absolute fluorine atom concentrations in RIE and ECR CF4 plasmas measured by actinometry , 1994 .

[28]  Y. Jongen.  Electron cyclotron resonance (ECR) ion sources , 1984 .

[29]  Y. Kawai,et al.  Effects of Axial Magnetic Field and Faraday Shield on Characteristics of RF Produced Plasma Using Spiral Antenna , 1996 .

[30]  S. Samukawa,et al.  Generation and extinction characteristics of negative ions in pulse-time-modulated electron cyclotron resonance chlorine plasma , 1997 .

[31]  K. Giapis,et al.  On the origin of the notching effect during etching in uniform high density plasmas , 1997 .

[32]  K. Sridharan,et al.  Distribution of incident ions and retained dose analysis for a wedge‐shaped target in plasma source ion implantation , 1995 .

[33]  Uwe R. Kortshagen,et al.  On simplifying approaches to the solution of the Boltzmann equation in spatially inhomogeneous plasmas , 1996 .

[34]  J. Stevens,et al.  Helicon plasma source excited by a flat spiral coil , 1995 .

[35]  J. D. Evans,et al.  Low-field helicon discharges , 1997 .

[36]  A. Lichtenberg,et al.  Model of magnetically enhanced, capacitive RF discharges , 1991 .

[37]  P Biolsi,et al.  An Advanced Endpoint Solution for , 1996 .

[38]  S. Samukawa,et al.  Essential points for precise etching processes in pulse-time-modulated ultrahigh-frequency plasma , 1997 .

[39]  Jim McVittie,et al.  Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing , 1997 .

[40]  D. J. Economou,et al.  Rapid two-dimensional self-consistent simulation of inductively coupled plasma and comparison with experimental data , 1996 .

[41]  Sumio Ashida,et al.  Spatially Averaged (Global) Model of Time Modulated High Density Chlorine Plasmas , 1997 .

[42]  S. Samukawa.  Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning , 1994 .

[43]  John R. Miller,et al.  Azimuthally symmetric pseudosurface and helicon wave propagation in an inductively coupled plasma at low magnetic field , 1998 .

[44]  J. Roth,et al.  Surface Modification of Fabrics Using a One-Atmosphere Glow Discharge Plasma to Improve Fabric Wettability , 1997 .

[45]  Francis F. Chen,et al.  Helicons-the early years , 1997 .

[46]  R. Schaller,et al.  Moore's law: past, present and future , 1997 .

[47]  James W. Taylor,et al.  Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma , 1993 .

[48]  H. Güntherodt,et al.  Corona‐treated isotactic polypropylene films investigated by friction force microscopy , 1994 .

[49]  Gary S. Selwyn,et al.  Optical characterization of particle traps , 1994 .

[50]  P. Jones,et al.  Effects of atomic chlorine wall recombination: Comparison of a plasma chemistry model with experiment , 1995 .

[51]  Sumio Ashida,et al.  Global models of pulse-power-modulated high-density, low-pressure discharges , 1996 .

[52]  Helen Louise Maynard,et al.  Plasma Etching Endpointing by Monitoring Radio‐Frequency Power Systems with an Artificial Neural Network , 1996 .

[53]  Roderick Boswell,et al.  Helicons-the past decade , 1997 .

[54]  Satoshi Hamaguchi,et al.  Ionized physical vapor deposition of Cu for high aspect ratio damascene trench fill applications , 1996 .

[55]  V. Godyak,et al.  Ion flux and ion power losses at the electrode sheaths in a symmetrical rf discharge , 1991 .

[56]  G. Tynan,et al.  Characterization of an azimuthally symmetric helicon wave high density plasma source , 1997 .

[57]  Seiji Samukawa,et al.  Pulse‐time modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and less‐charging polycrystalline silicon patterning , 1994 .

[58]  R. D'agostino.  Plasma deposition, treatment, and etching of polymers , 1990 .

[59]  N. Fujiwara,et al.  Charge accumulation effects on profile distortion in ECR plasma etching , 1996 .

[60]  D. J. Pearson,et al.  Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects , 1991 .

[61]  K. Giapis,et al.  Electron irradiance of conductive sidewalls: A determining factor for pattern-dependent charging , 1997 .

[62]  Michel Moisan,et al.  Plasma sources using long linear microwave field applicators: main features, classification and modelling , 1995 .

[63]  Stephen M. Bobbio.  A Review of Magnetron Etch Technology , 1990, Other Conferences.

[64]  C. Charles,et al.  Breakdown, steady‐state, and decay regimes in pulsed oxygen helicon diffusion plasmas , 1995 .

[65]  Noah Hershkowitz,et al.  Measurements of the presheath in an electron cyclotron resonance etching device , 1992 .

[66]  L. Wadsworth,et al.  Mechanism of corona treatment on polyolefin films , 1998 .

[67]  Noah Hershkowitz,et al.  Diagnostics for plasma processing (etching plasmas) (invited) , 1997 .

[68]  Jane P. Chang,et al.  Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine , 1997 .

[69]  Ion Cristian Abraham,et al.  SiO2 to Si selectivity mechanisms in high density fluorocarbon plasma etching , 1996 .

[70]  J. Stevens,et al.  Role of nitrogen in the downstream etching of silicon nitride , 1996 .