220-MHz monolithically integrated optical sensor with large-area integrated PIN photodiode

We propose a PIN photodiode integrated in a BiCMOS process which combines a quantum efficiency of nearly 100% for red light, fast response times, and a low junction capacitance. Bandwidths of 720 MHz at 660 nm and 683 MHz at 850 nm are achieved for this PIN photodiode. It allows the design of fast optoelectronic integrated circuits for many advanced applications in optical sensing, optical storage systems, and optical data transmission for optical wavelengths ranging at least from 660 to 850 nm. Because of the low photodiode capacitance of 0.01 fF//spl mu/m/sup 2/, it is possible to achieve high bandwidths, even with large photodetector areas. The proposed optical receiver employing a PIN photodiode with a diameter of 500 /spl mu/m and a capacitance of only 2.2 pF attains a -3-dB bandwidth of 220 MHz, which corresponds to a maximum nonreturn-to-zero data rate of 300 Mbit/s.

[1]  K. Kieschnick,et al.  Integrated High-speed, High-responsivity Photodiodes in CMOS and BiCMOS Technology , 1999, 29th European Solid-State Device Research Conference.

[2]  U. Hilleringmann,et al.  System integration of optical devices and analog CMOS amplifiers , 1994 .

[3]  Guy Voirin,et al.  CMOS-based technology for integrated optoelectronics: a modular approach , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[4]  P. Lim,et al.  A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applications , 1993, 1993 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[5]  J. Müller.  Photodiodes for Optical Communication , 1981 .

[6]  S. Brigati,et al.  A 20 Mbit/s integrated photoreceiver with digital outputs in 0.6µm CMOS technology , 2002, Proceedings of the 28th European Solid-State Circuits Conference.

[7]  J.C. Campbell,et al.  A monolithically integrated 1-Gb/s silicon photoreceiver , 1999, IEEE Photonics Technology Letters.

[8]  Mark Ingels,et al.  A CMOS 18 THz/spl Omega/ 248 Mb/s transimpedance amplifier and 155 Mb/s LED-driver for low cost optical fiber links , 1994 .

[9]  K. Nakao,et al.  Si-OEIC with a built-in PIN-photodiode , 1995 .

[10]  K. Bach,et al.  Integrated PIN photodiodes in high-performance BiCMOS technology , 2002, Digest. International Electron Devices Meeting,.

[11]  Horst Zimmermann,et al.  220 MHz optical receiver with large-area integrated PIN photodiode , 2003, Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498).

[12]  U. Hilleringmann,et al.  Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip , 1995 .

[13]  C. T. Kirk,et al.  A theory of transistor cutoff frequency (fT) falloff at high current densities , 1962, IRE Transactions on Electron Devices.

[14]  Horst Zimmermann,et al.  Advanced photo integrated circuits in CMOS technology , 1999, 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299).

[15]  David A. Johns,et al.  A CMOS optical preamplifier for wireless infrared communications , 1999 .