Nanoelectromechanical Memory Cell (T Cell) for Low-Cost Embedded Nonvolatile Memory Applications
暂无分享,去创建一个
[1] Woo Young Choi. Three-Dimensional Stackable Electromechanical Nonvolatile Memory Cell (H Cell) for Four-Bit Operation , 2010, IEEE Electron Device Letters.
[2] Donggun Park,et al. NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications , 2007 .
[3] Woo Young Choi,et al. Scaling Trend of Nanoelectromechanical (NEM) Nonvolatile Memory Cells Based on Finite Element Analysis (FEA) , 2011, IEEE Transactions on Nanotechnology.
[4] Woo Young Choi,et al. New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory cells , 2010 .
[5] T. Liu,et al. Compact Nano-Electro-Mechanical Non-Volatile Memory (NEMory) for 3D Integration , 2007, 2007 IEEE International Electron Devices Meeting.
[6] T. Liu,et al. Nano-Electro-Mechanical Nonvolatile Memory (NEMory) Cell Design and Scaling , 2008, IEEE Transactions on Electron Devices.
[7] Ken Uchida,et al. Scaling Analysis of Nanoelectromechanical Memory Devices , 2010 .
[8] Yuan Taur,et al. Device scaling limits of Si MOSFETs and their application dependencies , 2001, Proc. IEEE.