论文信息 - Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors - 字舞流文

Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors

R. Klanner | J. Lange | E. Fretwurst | G. Lindström | J. Becker | D. Eckstein | D. Eckstein | R. Klanner

[1] I. Dolenc,et al. Epitaxial silicon detectors for particle tracking—Radiation tolerance at extreme hadron fluences , 2006 .

[2] M. Moll,et al. A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique , 2005 .

[3] Marko Zavrtanik,et al. Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions , 2002 .

[4] Marko Zavrtanik,et al. Determination of effective trapping times for electrons and holes in irradiated silicon , 2002 .

[5] V. Eremin,et al. The origin of double peak electric field distribution in heavily irradiated silicon detectors , 2002 .

[6] P. Ciampolini,et al. Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration , 2001 .

[7] A. Chilingarov,et al. A new method of carrier trapping time measurement , 2000 .

[8] A. Chilingarov,et al. Carrier lifetimes in heavily irradiated silicon diodes , 1999 .

[9] C. Jacoboni,et al. A review of some charge transport properties of silicon , 1977 .

[10] W. N. Grant. Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .