论文信息 - Fully integrated receiver front-ends for cell-phones in deep submicron CMOS

Fully integrated receiver front-ends for cell-phones in deep submicron CMOS

Leveraging an in-depth analysis of second order inter-modulation distortion in CMOS active mixers, this paper discusses techniques to improve the dynamic range of direct conversion fully integrated RF front-ends. Particular attention is dedicated to low voltage aspects for compatibility with future technology nodes. Integrated circuits solutions, tailored to UMTS and GSM, have been realized and experiments show specifications are met with margin

F. Svelto

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