Segmented transmission-line electroabsorption modulators

We present segmented transmission-line (TML) electroabsorption modulators (EAMs) with characteristic impedance close to 50 /spl Omega/. The segmented TML approach allows us to design a traveling-wave EAM with 50 /spl Omega/ impedance and very high bandwidth. The devices show low return loss (<-15 dB) and excellent frequency response up to 50 GHz, and exhibit a maximum model-extrapolated 3 dBe bandwidth (BW) of 90 GHz. An effective modeling tool based on Bloch-wave analysis is derived. Design considerations and TML properties for periodic TML-EAMs are discussed.

[1]  D. Pozar Microwave Engineering , 1990 .

[2]  Robert Lewén High-Speed Electroabsorption Modulators and p-i-n Photodiodes , 2003 .

[3]  Novel Substrate Removed Mach-Zehnder GaAs/AlGaAs Electro-optic Modulators , 1999 .

[4]  Substrate removed GaAs/AlGaAs Mach-Zehnder electro-optic modulators for ultra wide bandwidth operation , 1999, International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301).

[5]  Herbert Stanley Cole,et al.  Use of BCB in high frequency MCM interconnects : Special section on microwave packaging , 1996 .

[6]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[7]  P. Yu,et al.  High-saturation high-speed traveling-wave InGaAsP-InP electroabsorption modulator , 2001, IEEE Photonics Technology Letters.

[8]  S. Irmscher,et al.  InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors , 2002, IEEE Photonics Technology Letters.

[9]  S. Irmscher,et al.  Microwave CAD circuit modeling of a traveling-wave electroabsorption modulator , 2003 .

[10]  Paul K. L. Yu,et al.  Ultrahigh-speed traveling-wave electroabsorption modulator-design and analysis , 1999 .

[11]  S. Irmscher,et al.  Traveling-wave electrode electroabsorption modulators toward 100 Gb/s , 2004, Optical Fiber Communication Conference, 2004. OFC 2004.

[12]  Shigeaki Sekiguchi,et al.  Novel InP-based Mach-Zehnder modulator for 40 Gb/s integrated lightwave source , 2002, IEEE 18th International Semiconductor Laser Conference.

[13]  R. Walker High-speed III-V semiconductor intensity modulators , 1991 .

[14]  Masataka Shirai,et al.  40 Gbit/s electroabsorption modulators with impedance-controlled electrodes , 2003 .

[15]  Y. Miyamoto,et al.  Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers , 2001 .

[16]  R. Collin Foundations for microwave engineering , 1966 .

[17]  T. Yoshimatsu,et al.  320-Gbit/s Demultiplexing with Monolithic PD-EAM Optical Gate , 2002, 2002 28TH European Conference on Optical Communication.

[18]  Hsu-Feng Chou,et al.  High extinction ratio and saturation power traveling-wave electroabsorption modulator , 2002, IEEE Photonics Technology Letters.

[19]  G. G. Mekonnen,et al.  Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP , 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

[20]  Stefan Irmscher,et al.  Design, Fabrication and Analysis of InP-InGaAsP Traveling-Wave Electro-Absorption Modulators , 2003 .