High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy

High-quality InAlAs layers lattice matched to InP were successfully grown on (411)A-oriented InP substrates by molecular beam epitaxy (MBE). High-resolution x-ray diffraction and photoluminescence (PL) measurements of InAlAs layers grown on (411)A InP substrates revealed that crystalline quality of the (411)A InAlAs layer strongly depends on the substrate temperature (Ts), and much improved crystalline quality of (411)A InAlAs layer was achieved at a high Ts (570 °C). The linewidth of the PL (12 K) peak from the best (411)A InAlAs layer is 10.7 meV which is 16%–29% smaller than those (12.8–15 meV) of InAlAs layers grown on conventional (100) InP substrates by MBE.