Modeling for multilevel switching in oxide-based bipolar resistive memory

We report a physical model for multilevel switching in oxide-based bipolar resistive memory (ReRAM). To confirm the validity of the model, we conduct experiments with tantalum-oxide-based ReRAM of which multi-resistance levels are obtained by reset voltage modifications. It is also noticeable that, in addition to multilevel switching capability, the ReRAM exhibits extremely different switching timescales, i.e. of the order of 10−7 s to 100 s, with regard to reset voltages of only a few volts difference which can be well explained by our model. It is demonstrated that with this simple model, multilevel switching behavior in oxide bipolar ReRAM can be described not only qualitatively but also quantitatively.

[1]  R. Williams,et al.  Sub-nanosecond switching of a tantalum oxide memristor , 2011, Nanotechnology.

[2]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[3]  T. Hasegawa,et al.  Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. , 2011, Nature materials.

[4]  U-In Chung,et al.  Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching , 2011, IEEE Electron Device Letters.

[5]  J SmithDavid,et al.  超高真空透過電子顕微鏡法を用いたSi(110)上におけるCoSi2ナノワイヤーのエンドタキシャル成長のその場観測 , 2011 .

[6]  Myoung-Jae Lee,et al.  Modeling for bipolar resistive memory switching in transition-metal oxides , 2010 .

[7]  Gregory S. Snider,et al.  ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.

[8]  Masateru Taniguchi,et al.  Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire. , 2010, Nano letters.

[9]  Georg Kresse,et al.  Hybrid functional studies of the oxygen vacancy in TiO 2 , 2010 .

[10]  E. Kaxiras,et al.  Electric field tuning of oxygen stoichiometry at oxide surfaces: molecular dynamics simulations studies of zirconia , 2009 .

[11]  Qi Liu,et al.  Multilevel resistive switching with ionic and metallic filaments , 2009 .

[12]  Gregory S. Snider,et al.  Spike-timing-dependent learning in memristive nanodevices , 2008, 2008 IEEE International Symposium on Nanoscale Architectures.

[13]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[14]  C. Yoshida,et al.  High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application , 2007 .

[15]  S. Fonash,et al.  High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs , 2005, IEEE Electron Device Letters.

[16]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.

[17]  First principles study of oxygen vacancy migration in tantalum pentoxide , 2004 .

[18]  R. Ramprasad.  First principles study of oxygen vacancy defects in tantalum pentoxide , 2003 .