Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells
暂无分享,去创建一个
M. Hopkinson | G. Hill | P. Stavrinou | J. Hogg | S. Haywood | A. Lim | R. Gupta | S. Emery | V. Hewer | R. Gupta
[1] M. Missous,et al. Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP , 2003 .
[2] Ming C. Wu,et al. 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region , 2002 .
[3] Observation of quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells , 2000 .
[4] Ming‐Chung Wu,et al. Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition , 1999 .
[5] W. E. Hagston,et al. Large blue shifts induced by the quantum confined stark effect in asymmetric quantum wells , 1998 .
[6] I. Bennion,et al. Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple quantum well , 1998 .
[7] R. Leonelli,et al. Structural and optical properties of strain‐relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine , 1996 .
[8] L. Kronik,et al. Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction system , 1996 .
[9] M. Hopkinson,et al. Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields , 1996 .
[10] A. S. Pabla,et al. InxGa1−xAs/InP quantum well structures grown on [111]B InP , 1995 .
[11] M. Hopkinson,et al. Growth of InAsxP1−x/InP multi‐quantum well structures by solid source molecular beam epitaxy , 1995 .
[12] G. Parry,et al. Use of a three‐layer quantum‐well structure to achieve an absorption edge blueshift , 1994 .
[13] T. Nakahara,et al. Large blue shifts induced by Stark effect in asymmetric coupled quantum well , 1992 .
[14] David A. B. Miller,et al. Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device , 1990 .
[15] H. Sakaki,et al. Field‐induced decoupling of quantized levels and blue shift of absorption edge in a potential inserted quantum well structure , 1989 .
[16] D. Miller,et al. Optical bistability in self‐electro‐optic effect devices with asymmetric quantum wells , 1989 .
[17] P. Voisin,et al. Blue shift of the absorption edge in AlGaInAs‐GaInAs superlattices: Proposal for an original electro‐optical modulator , 1988 .
[18] Gaillard,et al. Observation of the Wannier-Stark quantization in a semiconductor superlattice. , 1988, Physical review letters.
[19] Karl Woodbridge,et al. Computer modeling of the electric field dependent absorption spectrum of multiple quantum well material , 1988 .
[20] Novel configuration of self‐electro‐optic effect device based on asymmetric quantum wells , 1988 .